Angled implant for shorter trench emitter

Details Angled implant for shorter trench emitter Angled implant for shorter trench emitter

2005-07-19

2005-07-19

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S524000, C438S589000

Reexamination Certificate

active

06919248

ABSTRACT:
An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.

REFERENCES:
patent: 6118150 (2000-09-01), Takahashi
patent: 6274437 (2001-08-01), Evans
patent: 6583010 (2003-06-01), Mo

Affiliated with

Also associated with

Rating

Angled implant for shorter trench emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Angled implant for shorter trench emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Angled implant for shorter trench emitter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3397749