Analysis of semiconductor surfaces by secondary ion mass spectro

Details Analysis of semiconductor surfaces by secondary ion mass spectro Analysis of semiconductor surfaces by secondary ion mass spectro

1998-03-05

1999-07-06

Nguyen, Kiet T.

Radiant energy

Inspection of solids or liquids by charged particles

Positive ion probe or microscope type

250281, 250282, 250287, H01J 3726

Patent

active

059200685

ABSTRACT:
An apparatus and method for mass spectrometric determination of contaminant components of a thin oxide surface layer of a semiconductor wafer uses a movable mechanical stage to scan and raster a large area of the wafer in a continuous scanning motion. The mass of analyte is greatly increased, resulting in improved sensitivity to trace components in the surface layer by a factor of 10-100 or more. An light beam interferometer is used to determine non-planarity from e.g. warping of the wafer and provide a correction by maintaining a constant separation between the wafer and the extraction plate or adjusting the electrical bias of the wafer relative to the extraction bias.

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