Analysis of semiconductor surfaces by secondary ion mass...

Radiant energy – Inspection of solids or liquids by charged particles – Positive ion probe or microscope type

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S281000, C250S282000, C250S287000

Reexamination Certificate

active

06855928

ABSTRACT:
An apparatus and method for mass spectrometric determination of contaminant components of a thin oxide surface layer of a semiconductor wafer using a movable mechanical stage to scan and raster a large area of the wafer in a continuous scanning motion. The mass of analyte is greatly increased, resulting in improved sensitivity to trace components in the surface layer by a factor of 10-100 or more. A light beam interferometer is used to determine non-planarity from e.g. warping of the wafer and provide a correction by maintaining a constant separation between the wafer and the extraction plate or adjusting the electrical bias of the wafer relative to the extraction bias.

REFERENCES:
patent: 4611120 (1986-09-01), Bancroft et al.
patent: 4874946 (1989-10-01), Kazmerski
patent: 4912325 (1990-03-01), Vandervorst et al.
patent: 5087815 (1992-02-01), Schultz et al.
patent: 5252361 (1993-10-01), Frechette et al.
patent: 5332879 (1994-07-01), Radhakrishnan et al.
patent: 5442174 (1995-08-01), Kataoka et al.
patent: 5502305 (1996-03-01), Kataoka
patent: 5521377 (1996-05-01), Kataoka et al.
patent: 5689112 (1997-11-01), Enge et al.
patent: 5714757 (1998-02-01), Itabashi et al.
patent: 5835225 (1998-11-01), Thakur
patent: 5920068 (1999-07-01), Marsh
patent: 6008491 (1999-12-01), Smentkowski et al.
patent: 6232600 (2001-05-01), Marsh
patent: 6271519 (2001-08-01), Marsh
patent: 6528786 (2003-03-01), Marsh
Louis Denes,The Effect of Wafer Flatness on Yield by Off-Line Computer Simulation of the Photolithographic Process; Semiconductor Processing, ASTM STP 850, American Society for Testing and Materials, 1984; pps. 143-159.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Analysis of semiconductor surfaces by secondary ion mass... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Analysis of semiconductor surfaces by secondary ion mass..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Analysis of semiconductor surfaces by secondary ion mass... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3486750

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.