Amorphous etch stop for the anisotropic etching of substrates

Details Amorphous etch stop for the anisotropic etching of substrates Amorphous etch stop for the anisotropic etching of substrates

2006-05-16

2006-05-16

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S524000, C438S705000

Reexamination Certificate

active

07045407

ABSTRACT:
Methods of forming an amorphous etch stop layer by implanting a substrate with an element that is electrically neutral within the substrate are described. The use of elements that are electrically neutral within the substrate prevents electrical interference by the elements if they diffuse to other areas within the substrate. The amorphous etch stop layer may be used as a hard mask in the fabrication of transistors or other devices such as a cantilever.

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