Amorphous carbon contact film for contact hole etch process

Details Amorphous carbon contact film for contact hole etch process Amorphous carbon contact film for contact hole etch process

2005-01-31

2008-05-13

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S586000, C438S592000

Reexamination Certificate

active

07371634

ABSTRACT:
A semiconductor device including a contact etch stop layer and contact hole formation method for reduced underlying material loss and improved device performance, the method including providing a semiconductor substrate including an active region including a CMOS device, STI structures, and metal silicide regions; forming a fluorine doped amorphous carbon layer over the active region; forming a PMD layer on the fluorine doped amorphous carbon layer; dry etching contact holes in the PMD layer to expose the fluorine doped amorphous carbon layer; and, removing the fluorine doped amorphous carbon layer according to a dry stripping process.

REFERENCES:
patent: 2007/0200179 (2007-08-01), Chen

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