Ammonia-treated polysilicon semiconductor device

Details Ammonia-treated polysilicon semiconductor device Ammonia-treated polysilicon semiconductor device

2006-04-04

2006-04-04

Abraham, Fetsum (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S494000

Reexamination Certificate

active

07022592

ABSTRACT:
Semiconductor devices, and methods of fabricating, having ammonia-treated polysilicon devices are provided. A substrate is provided upon which a polysilicon layer is formed. The polysilicon layer is treated with ammonia. Thereafter, portions of the polysilicon layer may be oxidized, forming poly-oxide regions. The poly-oxide regions may be used, for example, to form the poly-oxide layer of a split-gate transistor. The ammonia treatment reduces the tendency of the polysilicon to oxidize along the grain boundaries, thereby allowing smaller designs to be fabricated without bridging occurring between polysilicon structures.

REFERENCES:
patent: 4452881 (1984-06-01), Augstein et al.
patent: 5192703 (1993-03-01), Lee et al.
patent: 6297123 (2001-10-01), Sze et al.
patent: 6362045 (2002-03-01), Lin et al.
patent: 6380583 (2002-04-01), Hsieh et al.
patent: 6566734 (2003-05-01), Sugihara et al.

Affiliated with

Also associated with

Rating

Ammonia-treated polysilicon semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ammonia-treated polysilicon semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ammonia-treated polysilicon semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3569597