Ammonia annealed and wet oxidized LPCVD oxide to replace ono fil

Details Ammonia annealed and wet oxidized LPCVD oxide to replace ono fil Ammonia annealed and wet oxidized LPCVD oxide to replace ono fil

1999-03-11

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438266, H01L 21336

Patent

active

061626848

ABSTRACT:
In one embodiment, the present invention relates to a method of forming a flash memory cell, involving the steps of forming a tunnel oxide on a substrate; forming a first polysilicon layer over the tunnel oxide; forming an insulating layer over the first polysilicon layer, the insulating layer comprising an oxide layer made by low pressure chemical vapor deposition at a temperature from about 600.degree. C. to about 850.degree. C. using SiH.sub.4 and N.sub.2 O, annealing in an NH.sub.3 atmosphere at a temperature from about 800.degree. C. to about 900.degree. C., and wet oxidizing using O.sub.2 and H.sub.2 at a temperature from about 820.degree. C. to about 880.degree. C.; forming a second polysilicon layer over the insulating layer; etching at least the first polysilicon layer, the second polysilicon layer and the insulating layer, thereby defining at least one stacked gate structure; and forming a source region and a drain region in the substrate, thereby forming at least one memory cell.

REFERENCES:
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 5231299 (1993-07-01), Ning et al.
patent: 5397720 (1995-03-01), Kwong et al.
patent: 5420060 (1995-05-01), Gill et al.
patent: 5457336 (1995-10-01), Fang et al.
patent: 5467308 (1995-11-01), Chang et al.
patent: 5496756 (1996-03-01), Sharma et al.
patent: 5512505 (1996-04-01), Yuan et al.
patent: 5541436 (1996-07-01), Kwong et al.
patent: 5585656 (1996-12-01), Hsue et al.
patent: 5591681 (1997-01-01), Wristers et al.
patent: 5654217 (1997-08-01), Yuan et al.
patent: 5674788 (1997-10-01), Wristers et al.
patent: 5783471 (1998-07-01), Chu
patent: 5796142 (1998-08-01), Lin et al.
patent: 6063666 (2000-05-01), Chang et al.
patent: 6074917 (2000-05-01), Chang et al.
Olivo, P., Z. A. Weinberg, K.J. Stein and D.S. Wen, "Charge Trapping And Retention In Ultra-Thin Oxide-Nitride-Oxide Structures", Solid State Electronics, vol. 34, No. 6, pp. 609-611, 1991.

Affiliated with

Also associated with

Rating

Ammonia annealed and wet oxidized LPCVD oxide to replace ono fil does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ammonia annealed and wet oxidized LPCVD oxide to replace ono fil, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ammonia annealed and wet oxidized LPCVD oxide to replace ono fil will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-270651