Aluminum spiking inspection method

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438 14, 438 16, 438 17, 438754, 438756, H01L 2166, H01L 2144, H01L 21461

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06107201&

ABSTRACT:
A method for inspection which involves the complete and sequential removal of an aluminum containing metallization layer, and other metal and insulator layers, from the surface of a silicon substrate. The layers are removed through sequential chemical etch processes tailored specifically to the composition of the individual layers. Upon removal of all layers, the surface of the silicon substrate is etched in a buffered aqueous etchant solution. The surface of the silicon substrate may then be inspected with the aid of an optical microscope to determine level to which the aluminum containing metallization layer has spiked into the silicon substrate.

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