Aluminum oxide as liner or cover layer to spacers in memory...

Details Aluminum oxide as liner or cover layer to spacers in memory... Aluminum oxide as liner or cover layer to spacers in memory...

2007-03-27

2007-03-27

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S261000, C257SE21180, C257SE21280, C257SE29201, C257SE21210, C257SE21423, C257SE21679

Reexamination Certificate

active

11087793

ABSTRACT:
For fabricating a memory device, spacers are formed to sides of word-line gates. In addition, aluminum oxide is formed as one of a liner layer or a cover layer to the spacers. The aluminum oxide has a chemical composition of Al2O3for example. Such aluminum oxide may be used as an etch stop layer in a periphery region, a metal silicide block, and a hydrogen block for enhanced performance of the memory device.

REFERENCES:
patent: 4944682 (1990-07-01), Cronin et al.
patent: 5707901 (1998-01-01), Cho et al.
patent: 5731242 (1998-03-01), Parat et al.
patent: 5946589 (1999-08-01), Ng et al.
patent: 2003/0015752 (2003-01-01), Palm et al.
patent: 2005/0153511 (2005-07-01), Jung
patent: 2006/0192243 (2006-08-01), Bhattacharyya

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