Aluminum nitride and aluminum oxide/aluminum nitride...

Details Aluminum nitride and aluminum oxide/aluminum nitride... Aluminum nitride and aluminum oxide/aluminum nitride...

2004-10-29

2009-02-10

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S591000

Reexamination Certificate

active

07488640

ABSTRACT:
A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer disposed over the channel region, the insulating layer including a layer including aluminum nitride disposed over the channel region, and a gate electrode disposed over the insulating layer.

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