Aluminum gates including ion implanted composite layers

Details Aluminum gates including ion implanted composite layers Aluminum gates including ion implanted composite layers

1997-09-29

1999-10-19

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, 257349, 257350, 257351, 257352, 257353, 257529, 257530, 257532, 257538, H01L 21223

Patent

active

059693860

ABSTRACT:
An aluminum gate for a thin film transistor is fabricating by implanting ions into the exposed surface of the aluminum gate. The ions are preferably selected from the group consisting of nitrogen, carbon, oxygen and boron ions. A composite layer of aluminum and the implanted ions thereby formed at the exposed surface of the aluminum layer. Gates for thin film transistors, including an aluminum layer and a composite layer of aluminum and another element at the surface thereof can suppress hillocks in the aluminum gate which may be caused by compressive stresses during subsequent fabrication steps. The composite layer can have a low resistance and can allow a direct contact with an indium tin oxide conductive layer.

REFERENCES:
patent: 3900352 (1975-08-01), Porter
patent: 5557137 (1996-09-01), Cohen
Howard, "Limitations and Prospects of a-Si:H TFTs", Journal of the SID, vol. 3, No. 3, 1995, pp. 127-132.
Walter et al., "Nitrogen Plasma Source Ion Implantation of Aluminum", J. Vac. Sci. Technol. B 12(2), Mar./Apr. 1994, pp. 945-950.
Lewis, Sr., "Hawley's Condensed Chemical Dictionary, 12 .sup.th Edition", 1993, p. 303.

Affiliated with

Also associated with

Rating

Aluminum gates including ion implanted composite layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Aluminum gates including ion implanted composite layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum gates including ion implanted composite layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2059267