Aluminum contact etch mask and etchstop for tungsten etchback

Details Aluminum contact etch mask and etchstop for tungsten etchback Aluminum contact etch mask and etchstop for tungsten etchback

1988-10-31

1991-03-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437195, 437228, 437 7, 437190, 437246, 357 71, 156643, 156646, 156657, H01L 21441, H01L 21461

Patent

active

049977890

ABSTRACT:
A method for forming CVD tungsten contacts in a planarized semiconductor body. The method utilizes aluminum as an etch mask and etch stop to prevent etching of underlying layers during contact formation.

REFERENCES:
patent: 4184909 (1980-01-01), Chang et al.
patent: 4367119 (1983-01-01), Logan et al.
patent: 4517225 (1985-05-01), Broadbent
patent: 4630357 (1986-12-01), Rogers et al.
patent: 4631806 (1986-12-01), Poppert et al.
patent: 4666737 (1987-05-01), Gimpelson et al.
patent: 4670091 (1987-06-01), Thomas et al.
patent: 4721689 (1988-01-01), Chaloux, Jr. et al.
patent: 4753709 (1988-06-01), Welch et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4808552 (1989-02-01), Anderson
patent: 4824802 (1989-04-01), Brown et al.
patent: 4855252 (1989-08-01), Peterman et al.

Affiliated with

Also associated with

Rating

Aluminum contact etch mask and etchstop for tungsten etchback does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Aluminum contact etch mask and etchstop for tungsten etchback, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum contact etch mask and etchstop for tungsten etchback will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-496514