Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2006-06-06
2008-10-28
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S459000, C257S737000, C257S738000, C257S778000, C257S779000, C438S612000, C438S613000
Reexamination Certificate
active
07443040
ABSTRACT:
A resulting solder bump structure comprising the following steps. A structure having a metal bond pad formed thereover is provided. A patterned cover layer is formed over the structure. The patterned cover layer including an opening exposing a portion of the metal bond pad. The patterned cover layer opening including side walls. A metal cap layer is formed over at least the exposed portion of the metal bond pad and the patterned cover layer side walls. A solder bump is formed over the metal cap layer.
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Guujun Oi, “Zincating morphology og aluminum bond pads . . . ”, Jan. 15, 2002, Science Direct, vol. 406, Issue 1-2, pp. 219-223.
Chartered Semiconductor Manufacturing Ltd.
Jr. Carl Whitehead
Mitchell James M
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