Alternating-doping profile for source/drain of a FET

Details Alternating-doping profile for source/drain of a FET Alternating-doping profile for source/drain of a FET

2011-07-12

2011-07-12

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29012

Reexamination Certificate

active

07977743

ABSTRACT:
A semiconductor device is provided. In an embodiment, the device includes a substrate and a transistor formed on the substrate. The transistor may include a gate structure, a source region, and a drain region. The drain region includes an alternating-doping profile region. The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant. In an embodiment, the transistor is a high voltage transistor.

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