Alignment marks for electron beam lithography

Details Alignment marks for electron beam lithography Alignment marks for electron beam lithography

1981-06-11

1983-10-04

Downey, Mary F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430 22, 430272, 430314, 430319, 204192C, 156643, 156646, G03C 500

Patent

active

044079338

ABSTRACT:
In a fabrication sequence for VLSI MOS devices, an advantageous alignment mark for a wafer to be directly processed by electron beam lithography is made of tantalum disilicide protected by a silicon nitride layer.

REFERENCES:
patent: 3519788 (1970-07-01), Hatzakis
patent: 4123661 (1978-10-01), Wolf et al.
patent: 4244799 (1981-01-01), Fraser et al.
patent: 4351892 (1982-09-01), Davis
patent: 4377627 (1983-03-01), Vinton
Murarka et al., "Refractory Silicides of Ti and Ta for Low-Resistivity Gates and Interconnects," IEEE J. Solid-State Circuits, vol. SC15 (4), pp. 474-482.
Herriott et al., "EBES: A Practical Electron Lithographic System," IEEE Transactions on Electron Devices, vol. ED-22, No. 7, pp. 385-392.
Henderson et al., "Issues in Fabricating Electron Devices with Submicrometer Dimensions," J. Vac. Sci. Tech., 16(2), p. 260.
Alles et al., "Control System Design and Alignment Methods for Electron Lithography," J. Vac. Sci. Tech., 12(6), pp. 1266-1270.
Watts et al., "Electron Beam Lithography for Small MOSFETs," IEDM Technical Digest, Dec. 1980, pp. 772-775.
Wolf et al., "Composition and Detection of Alignment Marks for Electron Beam Lithography," J. Vac. Sci. Technol., vol. 12, No. 6, Nov./Dec. 1975, pp. 1266-1270.

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