AlCu electromigration (EM) resistance

Details AlCu electromigration (EM) resistance AlCu electromigration (EM) resistance

1999-06-28

2000-08-08

Diamond, Alan

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419217, 438648, 438656, 438685, 438638, 438622, 438625, 438627, 438637, C23C 1434, H01L 214763

Patent

active

06099701&

ABSTRACT:
A method of manufacturing a Al-Cu line stack comprised of Ti-rich TIN, TiN, Ti-rich TiN, Al-Cu, Ti-rich TiN, TiN layers. A key feature of the invention is the sputtering of the Ti-rich TiN layers and TiN layers in the same Ti sputter chamber by turning off and on the N.sub.2 gas flow. For example, the Ti-rich TiN layer is formed by sputtering Ti with the N.sub.2 gas initially turned off. The overlying TiN layer is sputtered with the N.sub.2 gas turned on and the process stabilizes. The Ti-rich TiN layer is sputtered during a N.sub.2 off step (no N.sub.2 gas flow). The invention's Ti-rich TiN, TiN, Ti-rich TiN, Al-Cu, Ti-rich TiN, TiN layers increase the electromigration resistance.

REFERENCES:
patent: 5462895 (1995-10-01), Chen
patent: 5525543 (1996-06-01), Chen
patent: 5604155 (1997-02-01), Wang
patent: 5756396 (1998-05-01), Lee et al.
patent: 5759916 (1998-06-01), Hsu et al.

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