Al-doped charge trap layer, non-volatile memory device and...

Details Al-doped charge trap layer, non-volatile memory device and... Al-doped charge trap layer, non-volatile memory device and...

2007-08-28

2010-11-23

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S264000

Reexamination Certificate

active

07838422

ABSTRACT:
Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, wherein the charge trap layer is doped with aluminum (Al). The non-volatile memory device may include a substrate including a source and a drain on separate regions of the substrate, a tunneling film on the substrate contacting the source and the drain, the charge trap layer according to example embodiments, a blocking film on the charge trap layer, and a gate electrode on the blocking film.

REFERENCES:
patent: 6784103 (2004-08-01), Rao et al.
patent: 7012297 (2006-03-01), Bhattacharyya
patent: 7279740 (2007-10-01), Bhattacharyya et al.
patent: 7442989 (2008-10-01), Kobayashi et al.
patent: 2003/0042534 (2003-03-01), Bhattacharyya
patent: 10-2006-0070049 (2006-06-01), None

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