Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Reexamination Certificate
2006-10-24
2006-10-24
Owens, Douglas W. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
C438S619000, C257S522000
Reexamination Certificate
active
07125782
ABSTRACT:
Methods of forming air gaps or porous dielectric materials between interconnects of integrated circuits and structures thereof. Air gaps or highly porous dielectric material having a dielectric constant of close to or equal to 1.0 are formed in a first region but not a second region of an interconnect layer. The air gaps or highly porous dielectric material are formed by depositing a first insulating material comprising an energy-sensitive material over a workpiece, depositing a second insulating material over the first insulating material, and exposing the workpiece to energy. At least a portion of the first insulating material in the first region is removed through the second insulating material. Structurally stable insulating material is disposed between conductive lines in the second region of the workpiece, providing mechanical strength for the integrated circuit.
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Kastenmeier Bernd
Knorr Andreas
Moumen Naim
Infineon - Technologies AG
International Business Machines - Corporation
Owens Douglas W.
Slater & Matsil L.L.P.
Taylor Earl N.
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