Air gap structure having protective metal silicide pads on a...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S637000, C438S648000, C438S675000, C438S687000

Reexamination Certificate

active

08003520

ABSTRACT:
A hard mask is formed on an interconnect structure comprising a low-k material layer and a metal feature embedded therein. A block polymer is applied to the hard mask layer, self-assembled, and patterned to form a polymeric matrix of a polymeric block component and containing cylindrical holes. The hard mask and the low-k material layer therebelow are etched to form cavities. A conductive material is plated on exposed metallic surfaces including portions of top surfaces of the metal feature to form metal pads. Metal silicide pads are formed by exposure of the metal pads to a silicon containing gas. An etch is performed to enlarge and merge the cavities in the low-k material layer. The metal feature is protected from the etch by the metal silicide pads. An interconnect structure having an air gap and free of defects to surfaces of the metal feature is formed.

REFERENCES:
patent: 6143641 (2000-11-01), Kitch
patent: 6147009 (2000-11-01), Grill et al.
patent: 6252290 (2001-06-01), Quek et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6348731 (2002-02-01), Ashley et al.
patent: 6437443 (2002-08-01), Grill et al.
patent: 6441491 (2002-08-01), Grill et al.
patent: 6479110 (2002-11-01), Grill et al.
patent: 6497963 (2002-12-01), Grill et al.
patent: 6541398 (2003-04-01), Grill et al.
patent: 6577011 (2003-06-01), Buchwalter et al.
patent: 7053462 (2006-05-01), Yang et al.
patent: 2005/0167838 (2005-08-01), Edelstein et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Air gap structure having protective metal silicide pads on a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Air gap structure having protective metal silicide pads on a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Air gap structure having protective metal silicide pads on a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2755793

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.