Air-gap insulated interconnections

Details Air-gap insulated interconnections Air-gap insulated interconnections

2007-10-23

2007-10-23

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S421000, C438S422000, C438S619000

Reexamination Certificate

active

10711394

ABSTRACT:
Air-gap insulated interconnection structures and methods of fabricating the structures, the methods including: forming a dielectric layer on a substrate; forming a capping layer on a top surface of the dielectric layer; forming a trench through the capping layer, the trench extending toward said substrate and into but not through, the dielectric layer; forming a sacrificial layer on opposing sidewalls of the trench; filling the trench with a electrical conductor; and removing a portion of the sacrificial layer from between the electrical conductor and the dielectric layer to form air-gaps.

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patent: 6465339 (2002-10-01), Brankner et al.
patent: 6492732 (2002-12-01), Lee et al.
patent: 6686643 (2004-02-01), Schwarzl et al.

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