Air gap formation for high speed IC processing

Details Air gap formation for high speed IC processing Air gap formation for high speed IC processing

1999-01-25

2000-06-06

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438411, 438421, 438422, 438598, 438637, 438667, 438669, H01L 214763

Patent

active

060718056

ABSTRACT:
The process of the present invention can be used for conventional processing or for the Damascene process. The key concept of the present invention is a functional "filler" material which can later be removed (decomposed) to leave an air gap between the conducting lines. The filler material can be deposited as a step during conventional metal etch processing or it can be deposited as a first step of the processing of a semiconductor wafer. Leakage currents can be reduced as part of the present invention by applying passivation layers.

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