Air gap formation and integration using a patterning cap

Details Air gap formation and integration using a patterning cap Air gap formation and integration using a patterning cap

2008-12-17

2010-10-12

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S421000, C438S422000, C257S522000, C257SE23013, C257SE21581

Reexamination Certificate

active

07811924

ABSTRACT:
Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap.

REFERENCES:
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 2007/0224823 (2007-09-01), Sandhu
patent: 2009/0001045 (2009-01-01), Chen et al.
patent: 2009/0200636 (2009-08-01), Edelstein et al.

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