Air gap for dual damascene applications

Details Air gap for dual damascene applications Air gap for dual damascene applications

2002-11-15

2008-11-11

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21573, C257SE21579, C257SE21581

Reexamination Certificate

active

07449407

ABSTRACT:
An air gap structure and formation method for substantially reducing capacitance in a dual damascene based interconnect structure is disclosed. The air gap extends above, and may also additionally extend below, the damascene interconnects desired to be isolated thus minimizing fringing fields between the lines. Multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels.

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