Air-filled isolation trench with chemically vapor deposited sili

Details Air-filled isolation trench with chemically vapor deposited sili Air-filled isolation trench with chemically vapor deposited sili

1991-06-18

1992-03-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437927, H01L 2176

Patent

active

050988565

ABSTRACT:
A process for forming air-filled isolation trenches in a semiconductor substrate by a conformal chemical vapor deposition (CVD) of a silicon dioxide layer over the passivated surface of the semiconductor substrate in which intersecting trenches have been formed and partially filled with a material that can subsequentially be removed from under the CVD silicon dioxide layer, such materials include water soluble glasses and polymeric materials, such as a polyimide. The CVD silicon dioxide is etched back to the passivated surface of the semiconductor substrate, forming openings in the layer at the trench intersections that extend to the trench fill material. The fill material is removed through these openings. A CVD silicon dioxide layer is deposited to fill the openings, leaving a silicon dioxide cap bridging the air-filled trench. Water soluble glasses that may be used to fill the trench include BSG glass (B.sub.2 O.sub.3 content greater than 55%) and germanosilicate glass (GeO.sub.2 content greater than 50%). A polymer fill, such as a polyimide, if used, may be removed by plasma etching in O.sub.2.

REFERENCES:
patent: 3689992 (1972-09-01), Schutze et al.
patent: 3932226 (1976-01-01), Klatskin et al.
patent: 4925805 (1990-05-01), Van Omner et al.

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