Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-03-17
2008-11-04
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S758000, C438S764000, C438S787000, C257SE21114, C257SE21191
Reexamination Certificate
active
07446055
ABSTRACT:
This invention relates to an improvement in a deposition process for producing low dielectric films having a dielectric constant of 3, preferably <2.7 and lower. The process comprises the steps:(a) forming a liquid precursor solution comprised of an organosilicon source containing both Si—O and Si—C bonds and solvent;(b) generating a liquid mist of said liquid precursor solution, said mist existing as precursor solution droplets having a number average droplet diameter size of less than 0.5 μm;(c) preferably electrically charging the liquid mist of said liquid precursor solution droplets;(d) depositing liquid mist of said liquid precursor solution droplets onto a substrate; and,(e) converting the thus deposited liquid mist of said liquid precursor solution droplets to a solid, low dielectric film.
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P. Mumbauer, et al, Primaxx Inc., Mist Deposition in Semiconductor Device Manufacturing, Semiconductor International, Nov. 1, 2004, 7 pages.
Coulter Sarah Kathryn
MacDougall James Edward
Vincent Jean Louise
Weigel Scott Jeffrey
Air Products and Chemicals Inc.
Chase Geoffrey L.
Geyer Scott B.
Lee Cheung
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