Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
438623, 438624, 438790, H01L 21316
This invention pertains generally to precursors and deposition methods suited to aerogel thin film fabrication. An aerogel precursor sol which contains an oligomerized metal alkoxide (such as TEOS), a high vapor pressure solvent (such as ethanol) and a low vapor pressure solvent (such as water and 1-butanol) is disclosed. By a method according to the present invention, such a precursor sol is applied as a thin film to a semiconductor wafer, and the high vapor pressure solvent is allowed to evaporate while evaporation of the low vapor pressure solvent is limited, preferably by controlling the atmosphere adjacent to the wafer. The reduced sol is then allowed to gel at a concentration determined by the ratio of metal.alkoxide to low vapor pressure solvent. One advantage of the present invention is that it provides a stable, spinnable sol for setting film thickness and providing good planarity and gap fill for patterned wafers. In addition, however, the reduced sol may be gelled rapidly from a known sol concentration keyed to the desired final density of the aerogel thin film and largely independent of film thickness and spin conditions.
patent: 4713233 (1987-12-01), Marsh et al.
patent: 4954327 (1990-09-01), Blount
patent: 5207814 (1993-05-01), Cogliati et al.
patent: 5242647 (1993-09-01), Poco
patent: 5275796 (1994-01-01), Tillotson et al.
patent: 5294480 (1994-03-01), Mielke et al.
patent: 5391364 (1995-02-01), Cogliati
patent: 5409683 (1995-04-01), Tillotson et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5472913 (1995-12-01), Havemann et al.
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5494858 (1996-02-01), Gnade et aql.
patent: 5496527 (1996-03-01), Yokogawa et al.
patent: 5504042 (1996-04-01), Cho et al.
patent: 5523615 (1996-06-01), Cho et al.
patent: 5525857 (1996-06-01), Gnade et al.
patent: 5536965 (1996-07-01), Beratan et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5561318 (1996-10-01), Gnade et al.
patent: 5736425 (1998-04-01), Smith et al.
patent: 5746992 (1998-05-01), Yoldas et al.
patent: 5753305 (1998-05-01), Smith et al.
patent: 5807607 (1998-09-01), Smith et al.
V.S. Klimenko, L.A. Kulik, and V.V. Vashchinskaya, Dependence of the Composition and Structure of Silicic Acid Xerogels on the Nature of the Solvent, 1986, Ukrainskii Khimicheskii Zhurnal, vol. 52, No. 12, pp. 1247-1251.
Norges Tekniske Hogskole, Preparation and Charaterization of Transparent, Monolithic Silica Xerogels With Low Density, Jan. 1993.
D. Basmadjian, G. N. Fulford, B.I. Parsons, and D.S. Montgomery, The Control of the Pore, Volume and Pore Size Distribution in Alumina and Silica Gels by the Addition of Water Soluble Organic Polymers Dec. 1962, Journal of Catalysis, vol. 1, No. 6, pp. 547-563.
H. Yokogawa, M. Yokoyama, Hydrophobic Silica Aerogels, Journal of Non-Crystalline Solids 186 (1995) 23-29.
Ackerman William C.
Gnade Bruce E.
Johnston Gregory P.
Smith Douglas M.
Hoel Carlton H.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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