Interconnection fabrication method for semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438600, 438692, 437 50, 257774, H01L 214763

Patent

active

061301531

ABSTRACT:
An interconnection fabricating method for a semiconductor device includes the steps of forming an interconnection layer on a semiconductor substrate, forming a first photoresist layer on the interconnection layer, forming an insulation layer on the first photoresist layer, forming a second photoresist layer pattern on the insulation layer, sequentially etching the insulation layer and the first photoresist layer to obtain an insulation layer pattern and a first photoresist layer pattern, and removing the second photoresist layer pattern, removing the insulation layer pattern using dry etching, and forming an interconnection layer pattern by selectively etching the interconnection layer.

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Kornblit, A. et al., "Linewidth Control in Trilevel Etching", SPIE, vol. 775, pp. 320-326, 1987.

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