Advanced technique for forming a transistor having raised...

Details Advanced technique for forming a transistor having raised... Advanced technique for forming a transistor having raised...

2006-11-21

2006-11-21

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21430

Reexamination Certificate

active

07138320

ABSTRACT:
By recessing a semiconductor layer, preferably by locally oxidizing the semiconductor layer, a stress-inducing material and/or a dopant species may be introduced into the thinned semiconductor layer in the vicinity of a gate electrode structure by means of a subsequent epitaxial growth process. In particular, the stress-inducing material formed adjacent to the gate electrode structure exerts compressive or tensile stress, depending on the type of material deposited, thereby also enhancing the mobility of the charge carriers in a channel region of the transistor element.

REFERENCES:
patent: 5972762 (1999-10-01), Wu
patent: 6127233 (2000-10-01), Rodder
patent: 6326664 (2001-12-01), Chau et al.
patent: 2003/0098479 (2003-05-01), Murthy et al.
patent: 2004/0173815 (2004-09-01), Yeo et al.

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