Advanced low dielectric constant organosilicon plasma...

Details Advanced low dielectric constant organosilicon plasma... Advanced low dielectric constant organosilicon plasma...

2007-02-05

2009-02-24

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C438S788000

Reexamination Certificate

active

07494938

ABSTRACT:
A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH2— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH3+CH2stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH3bonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.

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