Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-11-17
2000-12-26
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, 438615, 438617, 438666, H01L 2144
Patent
active
061658863
ABSTRACT:
An improved metal bonding pad is disclosed which can prevent the formation of cracks during the high temperature PECVD deposition, and the subsequent annealing, of a passivation layer which is formed to encroach the metal bonding pad and provide an encapsulation force on the metal bonding pad. The metal bonding pad comprises a plurality of stress bumpers on the periphery thereof. The stress bumpers can be hollow elongated round-cornered rectangles, pin-shaped circles, Y-shaped polygons, or ellipses. The stress bumpers, which create a discontinuous structure in the metal pad, can effectively stop stress propagation as well as relieve and re-direct stress propagation, so as to maintain the integrity of the passivation encroachment and prevent the peeling off problems often observed with the metal bonding pad.
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Feng Min-Shinn
Lin Chi-Fa
Tseng Wei-Tsu
Chambliss Alonzo
Chaudhuri Olik
Liauh W. Wayne
Winbond Electronics Corp.
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