Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-24
2006-10-24
Mai, Anh D. (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S701000, C438S740000, C257S758000
Reexamination Certificate
active
07125791
ABSTRACT:
A method of forming round bottom corners for conductive lines in an integrated circuit is presented. Two approaches are taken to achieve a preferred rounding profile. For both approaches, a trench is formed and conductive materials are filled in the trench. The etch stop layer (ESL) approach involves forming an ESL underlying an inter-level dielectric (ILD). After etching a trench in the ILD, the ESL is etched to further round trench corners. The chemistry approach involves changing the etching chemistry when etching the trench. The two approaches can be used separately or combined in the preferred embodiments of the present invention. In a preferred embodiment, a via structure comprising two copper lines and an interconnecting via is formed. By using the ESL and chemistry approaches, the bottom corners are formed substantially round. The preferred embodiment of the present invention is applied to conductive features that are close enough to cause time dependent dielectric breakdown.
REFERENCES:
patent: 5746884 (1998-05-01), Gupta et al.
patent: 5939335 (1999-08-01), Arndt et al.
patent: 6235643 (2001-05-01), Mui et al.
patent: 6274483 (2001-08-01), Chang et al.
patent: 6294476 (2001-09-01), Lin et al.
patent: 6586842 (2003-07-01), You et al.
patent: 6689684 (2004-02-01), You et al.
patent: 2003/0227089 (2003-12-01), Watanabe et al.
patent: 2005/0073053 (2005-04-01), Park
Wang, X., et al., “In-Situ Shallow Trench Isolation Etch with Clean Chemistry,” IEEE/CPMT Int'l Electronics Manufacturing Technology Symposium, 1998, pp. 150-154.
Kalam Abul
Mai Anh D.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Advanced copper damascene structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Advanced copper damascene structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Advanced copper damascene structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3666255