Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-16
2007-01-16
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S640000, C438S653000, C438S675000
Reexamination Certificate
active
10985960
ABSTRACT:
A high integrity, reliable liner is disclosed for a via in which a titanium aluminide layer is preformed as a lining within a via hole prior to deposition of other conductive materials within the via hole. The conductive materials deposited on the preformed titanium aluminide can be either a secondary barrier layer portion of the liner, such as a titanium compound layer, which in turn has a metal plug deposited thereon, or, alternatively, a metal plug directly deposited on the titanium aluminide layer. An important advantage achieved by the present invention is that a via is formed with a substantial elimination of void formation. The enhanced vias are useful in a wide variety of semiconductor devices, including SRAMS and DRAMs.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Kang Donghee
Micro)n Technology, Inc.
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