Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Reexamination Certificate
2008-07-22
2008-07-22
Baumeister, Bradley W. (Department: 2891)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
C257SE23147, C257S530000
Reexamination Certificate
active
11207218
ABSTRACT:
An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric between interconnects. The resistance between these original interconnects starts decreasing when two adjacent interconnects are biased and causes a time-dependent dielectric breakdown, TDDB, phenomenon to occur. Decreasing of the resistance between adjacent interconnects can also be expedited via increasing the local temperature.
REFERENCES:
patent: 5789795 (1998-08-01), Sanchez et al.
patent: 6124194 (2000-09-01), Shao et al.
patent: 6251710 (2001-06-01), Radens et al.
patent: 6294474 (2001-09-01), Tzeng et al.
patent: 6335228 (2002-01-01), Fuller et al.
patent: 6380003 (2002-04-01), Jahnes et al.
patent: 6486527 (2002-11-01), MacPherson et al.
patent: 6638794 (2003-10-01), Tseng
patent: 6833604 (2004-12-01), Tsau
patent: 7300825 (2007-11-01), Greco et al.
Clevenger Lawrence A.
Dalton Timothy J.
Fuller Nicholas C.
Hsu Louis C.
Yang Chih-Chao
Anya Igwe U.
Baumeister Bradley W.
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
LandOfFree
Adopting feature of buried electrically conductive layer in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Adopting feature of buried electrically conductive layer in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Adopting feature of buried electrically conductive layer in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3924359