Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Reexamination Certificate
2008-07-22
2008-07-22
Baumeister, Bradley W. (Department: 2891)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
C257SE23147, C257S530000
Reexamination Certificate
active
07402463
ABSTRACT:
An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric between interconnects. The resistance between these original interconnects starts decreasing when two adjacent interconnects are biased and causes a time-dependent dielectric breakdown, TDDB, phenomenon to occur. Decreasing of the resistance between adjacent interconnects can also be expedited via increasing the local temperature.
REFERENCES:
patent: 5789795 (1998-08-01), Sanchez et al.
patent: 6124194 (2000-09-01), Shao et al.
patent: 6251710 (2001-06-01), Radens et al.
patent: 6294474 (2001-09-01), Tzeng et al.
patent: 6335228 (2002-01-01), Fuller et al.
patent: 6380003 (2002-04-01), Jahnes et al.
patent: 6486527 (2002-11-01), MacPherson et al.
patent: 6638794 (2003-10-01), Tseng
patent: 6833604 (2004-12-01), Tsau
patent: 7300825 (2007-11-01), Greco et al.
Clevenger Lawrence A.
Dalton Timothy J.
Fuller Nicholas C.
Hsu Louis C.
Yang Chih-Chao
Anya Igwe U.
Baumeister Bradley W.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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