Adopting feature of buried electrically conductive layer in...

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state

Reexamination Certificate

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C257SE23147, C257S530000

Reexamination Certificate

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07402463

ABSTRACT:
An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric between interconnects. The resistance between these original interconnects starts decreasing when two adjacent interconnects are biased and causes a time-dependent dielectric breakdown, TDDB, phenomenon to occur. Decreasing of the resistance between adjacent interconnects can also be expedited via increasing the local temperature.

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