Adjustable threshold isolation transistor

Details Adjustable threshold isolation transistor Adjustable threshold isolation transistor

2005-09-13

2005-09-13

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S220000

Reexamination Certificate

active

06943072

ABSTRACT:
An method and apparatus for high voltage control of isolation region transistors (320) in an integrated circuit. Isolation region transistors (320) are formed between active devices by selective implantation of channel stop implants (140). Isolation region transistors (320) are those areas with a conductor (130) over an isolation region (120) with no channel stop implant (140). This provides an isolation region transistor (320) with a lower threshold voltage than the areas with channel stop implant (140). The voltage threshold of the isolation region transistors320are adjustable to a range of voltages by varying the length of channel stop implant (140). The apparatus may be fabricated using conventional fabrication processes.

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Neil Weste et al., “Principles of CMOS VLSI Design, A System Perspective”, CMOS Processing Technology, 1985, Chapter 3, pp. 64-98.

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