Adhesion to copper and copper electromigration resistance

Details Adhesion to copper and copper electromigration resistance Adhesion to copper and copper electromigration resistance

2009-03-18

2011-10-25

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S778000, C257SE21214

Reexamination Certificate

active

08043976

ABSTRACT:
The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.

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