Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-08-11
2008-10-28
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000, C257S774000
Reexamination Certificate
active
07443029
ABSTRACT:
A new method and structure is provided for the creation of a copper dual damascene interconnect. A dual damascene structure is created in the layer of dielectric, optionally a metal barrier layer is deposited over exposed surfaces of the dual damascene structure. A copper seed layer is deposited, the dual damascene structure is filled with copper. An anneal is applied to the created copper interconnect after which excess copper is removed from the dielectric. Of critical importance to the invention, a thin layer of oxide is then deposited as a cap layer over the copper dual damascene interconnect, an etch stop layer is then deposited over the thin layer of oxide for continued upper-level metallization.
REFERENCES:
patent: 6054769 (2000-04-01), Jeng
patent: 6169028 (2001-01-01), Wang et al.
patent: 6274499 (2001-08-01), Gupta et al.
patent: 6309970 (2001-10-01), Ito et al.
patent: 6346479 (2002-02-01), Woo et al.
patent: 6348407 (2002-02-01), Gupta et al.
patent: 6365502 (2002-04-01), Paranjpe et al.
patent: 6406996 (2002-06-01), Bernard et al.
patent: 6426293 (2002-07-01), Wang et al.
patent: 6706629 (2004-03-01), Lin et al.
patent: 6806192 (2004-10-01), Lin et al.
patent: 6943111 (2005-09-01), Lin et al.
patent: 2001/0027083 (2001-10-01), Farkas et al.
Hsieh Ching-Hua
Liang Mong-Song
Lin Jing Cheng
Shue Shau-Lin
Haynes & Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Thien F
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