Adhesion of carbon doped oxides by silanization

Details Adhesion of carbon doped oxides by silanization Adhesion of carbon doped oxides by silanization

2005-12-13

2005-12-13

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S690000, C438S780000, C438S781000, C438S692000, C438S786000, C438S787000, C438S782000, C257S642000, C257S789000, C257S791000, C257S040000, C257S411000, C257S410000

Reexamination Certificate

active

06974762

ABSTRACT:
A method of silanizing the surface of a low-k interlayer dielectric oxides (carbon doped oxides or organo-silicate glasses) to improve surface adhesion to adjacent thin film layers in damascene integration of microelectronic devices. A low-k interlayer dielectric oxide may be exposed to the vapor of a silane-coupling agent in order to modify its surface energy to improve adhesion with adjacent thin film layers. A low-k interlayer dielectric oxide can also be silanized by dipping the low-k interlayer dielectric oxide in a solution of silane-coupling agent. The silane-coupling agent will cause covalent bonds between the low-k interlayer dielectric oxide and the adjacent thin film thereby improving adhesion.

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