Adhesion layer for tungsten deposition

Details Adhesion layer for tungsten deposition Adhesion layer for tungsten deposition

1995-06-07

1998-03-10

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419217, C23C 1434

Patent

active

057257400

ABSTRACT:
A method of removing free titanium from the edge of a substrate having a layer of titanium and a layer of titanium nitride thereover by forming a plasma of a nitrogen-containing gas. The plasma reacts with exposed free titanium to form titanium nitride therefrom. Preferably the dual Ti/TiN depositions and the plasma treatment are all carried out in the same chamber.

REFERENCES:
patent: 4160690 (1979-07-01), Shibagaki et al.
patent: 4664747 (1987-05-01), Sekiguchi et al.
patent: 4844775 (1989-07-01), Keeble
patent: 5202008 (1993-04-01), Talieh et al.
patent: 5427666 (1995-06-01), Mueller et al.
patent: 5439574 (1995-08-01), Kobayashi et al.
Schmitz, Chap. II "The Blanket Tungsten Approach", Chemical Vapor Deposition of Tungsten and Tungsten Silicides, Noyes Publications, pp. 10-19.

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