Adhesion enhancement for metal/dielectric interface

Details Adhesion enhancement for metal/dielectric interface Adhesion enhancement for metal/dielectric interface

2006-05-25

2008-11-04

Toledo, Fernando L (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S637000, C438S638000, C438S780000, C257SE21576, C257SE21577

Reexamination Certificate

active

07446058

ABSTRACT:
An interconnect structure and method of fabricating the same in which the adhesion between a chemically etched dielectric material and a noble metal liner is improved are provided. In accordance with the present invention, a chemically etching dielectric material is subjected to a treatment step which modified the chemical nature of the dielectric material such that the treated surfaces become hydrophobic. The treatment step is performed prior to deposition of the noble metal liner and aides in improving the adhesion between the chemically etched dielectric material and the noble metal liner.

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