Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2002-10-30
2004-11-02
Guerrero, Maria (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S624000, C438S644000, C438S763000, C438S780000, C438S781000
Reexamination Certificate
active
06812135
ABSTRACT:
BACKGROUND OF THE INVENTION
Adhesion between chemical vapor deposition (CVD) barrier dielectric layers, or via etch-stop layers, and silicate (SiO based materials) low-k films, or solution-gelation (SOL-GEL) processed films, is a major concern in microelectronics integration. Weak adhesion at this interface results in film delamination during subsequent processing. In current practice, such adhesion is very low, on the order of less than about 0.12 GPa/M (giga parcel/square root meter), which results in severe peeling.
U.S. Pat. No. 6,303,524 B1 to Sharangpani et al. describes low-k curing methods that affect adhesion.
U.S. Pat. No. 6,303,523 B2 to Cheung et al. describes a low-k film deposition process to improve adhesion.
U.S. Pat. No. 6,180,518 B1 to Layadi et al. describes a method of forming vias in a low-k dielectric material and discusses low-k layer adhesion problems.
U.S. Pat. No. 4,238,528 to Angelo et al. describes adhesion promoters for polyamides.
U.S. Pat. No. 5,965,202 to Taylor-Smith et al. describes coupling agents between low-k layers.
SUMMARY OF THE INVENTION
Accordingly, it is an object of one or more embodiments of the present invention to provide enhanced adhesion between dielectric films and silicate films.
It is another object of one or more embodiments of the present invention to provide enhanced adhesion between CVD dielectric films and spin-on low-k silicate films.
Other objects will appear hereinafter.
It has now been discovered that the above and other objects of the present invention may be accomplished in the following manner. Specifically, a structure having an overlying dielectric layer formed thereover is provided. An adhesion promoter layer is formed upon the dielectric layer. The adhesion promoter layer including adhesion promotion molecules. The dielectric layer and the adhesion promoter layer are treated to a low-temperature treatment to bind at least some of the adhesion promotion molecules to the dielectric layer. A silicate layer is formed upon the low-temperature treated adhesion promoter layer. The silicate layer and the low-temperature treated adhesion promoter layer are treated to a high-temperature treatment to bind at least some of the adhesion promotion molecules to the silicate layer whereby the silicate layer is adhered to the dielectric layer.
REFERENCES:
patent: 4238528 (1980-12-01), Angelo et al.
patent: 5556806 (1996-09-01), Pan et al.
patent: 5965202 (1999-10-01), Taylor-Smith et al.
patent: 5998103 (1999-12-01), Zhang
patent: 6008540 (1999-12-01), Lu et al.
patent: 6121159 (2000-09-01), Pasch
patent: 6153512 (2000-11-01), Chang et al.
patent: 6180518 (2001-01-01), Layadi et al.
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6303524 (2001-10-01), Sharangpani et al.
patent: 6418875 (2002-07-01), Annapragada
patent: 6599846 (2003-07-01), Komatsu et al.
patent: 6677231 (2004-01-01), Tsai et al.
Lee Shen-Nan
Li Lain-Jong
Guerrero Maria
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company, LTD
LandOfFree
Adhesion enhancement between CVD dielectric and spin-on... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Adhesion enhancement between CVD dielectric and spin-on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Adhesion enhancement between CVD dielectric and spin-on... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3358422