Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-22
2011-03-22
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S644000, C257SE21584
Reexamination Certificate
active
07910476
ABSTRACT:
A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
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Bencher Christopher D.
Fang Hongbin
Mei Fang
Naik Mehul B.
Shanmugasundram Arulkumar
Applied Materials Inc.
Landau Matthew C
Luke Daniel
Patterson & Sheridan LLP
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