Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-09-26
2010-12-28
Deo, Duy-Vu N (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C438S693000, C252S079100, C252S079400
Reexamination Certificate
active
07858527
ABSTRACT:
An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid including a second polymeric acid having a second weight average molecular weight and a second base material. A slurry composition is prepared by mixing the additive composition, a polishing particle composition, and water. When implementing a chemical mechanical polishing using the slurry composition, a favorable polishing selectivity is realized.
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Chon Sang-Mun
Kang Kyoung-Moon
Kim Nam-Soo
Lee Dong-Jun
Lee Sei-Cheol
Deo Duy-Vu N
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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