Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Statutory Invention Registration
2007-12-04
2007-12-04
Pihulic, Daniel (Department: 3662)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Statutory Invention Registration
active
11650595
ABSTRACT:
A method is provided for the production of solar cells from raw crystalline p-type silicon wafer material. The surface condition prior to SiNx deposition is improved by providing additional process steps following the phosphorous glass removal and prior to the SiNx anti-reflection coating deposition. In one embodiment, the wafer is submitted to a thermal anneal under oxygen atmosphere followed by a wet-chemical oxide removal. The anneal reduces the surface phosphorous concentration by diffusion, reduces lattice defects in the emitter and oxidizes the silicon surface. In another embodiment, both a surface oxide is obtained and subsequently removed with wet chemistry. This sequence allows for an integration of the phosphorous glass removal, the wet-chemical oxidation, and the SiOx removal into a single machine.
REFERENCES:
patent: 6946404 (2005-09-01), Bijker et al.
patent: 2004/0029334 (2004-02-01), Bijker et al.
patent: 2006/0231031 (2006-10-01), Dings et al.
patent: 2006/0292891 (2006-12-01), Bijker et al.
Pihulic Daniel
Pillsbury Winthrop Shaw & Pittman LLP
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