Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-07-30
1992-01-21
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156656, 1566591, 156665, 252 791, 430318, 437245, B44C 122, C23F 102
Patent
active
050825240
ABSTRACT:
An enhanced halogenated plasma for ion-assisted plasma etches to which silicon tetrabromide has been added to retard erosion, flowing and reticulation of photoresist, particularly during an etch of an aluminum or tungsten metal layer. The added resistance to erosion, flowing and reticulation is greater than that achieved through the addition of silicon tetrachloride to the same plasma. It is postulated that a silicon-containing layer is deposited on horizontal and vertical surfaces of photoresist at a faster rate than that possible for silicon tetrachloride. As with silicon tetrachloride, resist loss still occurs, but at a much reduced rate, with loss on the upper surfaces of the photoresist segments (these surfaces being perpendicular to the RF field of the reactor) occurring at a higher rate than loss on vertical surfaces (these surfaces being parallel to the RF field of the reactor).
REFERENCES:
patent: 4855015 (1989-08-01), Douglas
Fox III Angus C.
Micro)n Technology, Inc.
Powell William A.
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