Adding SF.sub.6 gas to improve metal undercut for hardmask metal

Details Adding SF.sub.6 gas to improve metal undercut for hardmask metal Adding SF.sub.6 gas to improve metal undercut for hardmask metal

1998-02-09

2000-08-15

Nuzzolillo, Maria

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438700, 438720, 438717, 438723, 438742, 438952, 438627, 216 64, 216 74, 216 75, 216 77, 216 58, H01L 21311, H01L 21302

Patent

active

061036307

ABSTRACT:
A new method of etching metal lines using SF.sub.6 gas during the overetch step to prevent undercutting of the anti-reflective coating layer is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an insulating layer. A barrier metal layer is deposited overlying the insulating layer. A metal layer is deposited overlying the barrier metal layer. A silicon oxide layer is deposited overlying the metal layer. The silicon oxide layer is covered with a layer of photoresist which is exposed, developed, and patterned to form the desired photoresist mask. The silicon oxide layer is etched away where it is not covered by the photoresist mask leaving a patterned hard mask. The metal layer is etched away where it is not covered by the patterned hard mask to form metal lines. Overetching is performed to remove the barrier layer where it is not covered by the hard mask wherein SF.sub.6 gas is one of the etchant gases used in the overetching whereby fluorine ions from the SF.sub.6 gas react with the metal layer and the barrier metal layer to form a passivation layer on the sidewalls of the metal lines thereby preventing undercutting of the metal lines resulting in metal lines having a vertical profile. The photoresist mask is removed and fabrication of the integrated circuit device is completed.

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