Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-09
1999-03-09
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438595, 438589, 438291, 438696, H01L 21336
Patent
active
058799982
ABSTRACT:
A short channel semiconductor device having source and drain regions in a substrate and a gate region on the top surface of the substrate between the source and drain regions is disclosed. In one embodiment, the method comprises: forming a device area in the silicon by forming a pattern stack, and forming pattern spacers adjacent to the pattern stack; forming a trench isolation about the pattern stack; removing the pattern spacers; depositing an epitaxial layer over the trench oxide and adjacent to the pattern stack; removing the pattern stack; and forming adaptively controlled spacers in the region to control said short channel length of the device.
The apparatus of the present invention comprises: a semiconductor substrate; a source region and a drain region formed in the substrate; a gate region, comprising a first and a second oxide regions, a first control spacer and a second control spacer positioned above the substrate and adjacent to the first and second oxide regions, respectively, and a polysilicon layer positioned between the spacers; and an epitaxial layer, adjacent to the source and drain region and surrounding said first and second spacers.
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Advanced Micro Devices , Inc.
Wilczewski Mary
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