Active pixel sensor having honeycomb structure

Details Active pixel sensor having honeycomb structure Active pixel sensor having honeycomb structure

2008-06-03

2008-06-03

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000

Reexamination Certificate

active

07382010

ABSTRACT:
An active pixel sensor of the present invention includes photo diodes with at least five side such as six sides arranged in a honeycomb structure with sharing of a floating diffusion (FD) region for increased fill factor. In addition, with sharing of transistor devices by multiple photo diodes, the fill factor is advantageously maximized.

REFERENCES:
patent: 6107655 (2000-08-01), Guidash
patent: 6750912 (2004-06-01), Tennant et al.
Japanese Patent Application No. 08-195908 to Dickinson et al, having Publication date of Jul. 30, 1996 (w/ English Abstract page).
Japanese Patent Application No. 2004-153253 to Sekine, having Publication date of May 27, 2004 (w/ English Abstract page).
Korean Patent Application No. P1999-0084630 to Kim et al, having Publication date of Dec. 6, 1999 (w/ English Abstract page).
Japanese Patent Application No. 2001-077344 to Nobuo, having Publication date of Mar. 23, 2001 (w/ English Abstract page).

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