Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-03-26
1999-04-06
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257290, 257291, H01L 31062, H01L 31113
Patent
active
058922539
ABSTRACT:
In an active pixel sensor cell, the blue response of the cell is balanced by utilizing a photodiode in lieu of a photogate, and the noise is reduced by quickly reading the voltage on a node, transferring the collected charge from the photodiode onto the node, and then again reading the voltage on the node.
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Dickinson, A. et al., "TP 13.5: A 256.times.256 CMOS Active Pixel Image Sensor with Motion Detection," pp. 226-227, 1995 IEEE International Solid-State Circuits Conf., Pasadena, CA., Feb. 16, 1995.
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Foveonics, Inc.
Ngo Ngan V.
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