Method of making a floating gate memory device

Details Method of making a floating gate memory device Method of making a floating gate memory device

1994-11-07

1995-12-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 437 52, H01L 218247, H01L 218239

Patent

active

054728932

ABSTRACT:
Provided is a semiconductor memory device wherein nonvolatile memory elements are arranged in a matrix configuration, each of the memory elements having a field effect transistor including a floating gate, an interlayer insulating film and a control gate electrode which are stacked on an insulating film covering a semiconductor substrate, and a source region and a drain region which are respectively formed in the semiconductor substrate on both sides of the gate electrode, the floating gate, interlayer insulating film and control gate electrode being formed in a recess provided in the semiconductor substrate. The semiconductor device of such a structure is reduced in size and highly integrated with its high-performance characteristics maintained.

REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 4488166 (1984-12-01), Lehrer
patent: 4700215 (1987-10-01), McPherson
patent: 4774556 (1988-09-01), Fujii et al.
patent: 4795722 (1989-01-01), Welch et al.
patent: 4929988 (1990-05-01), Yoshikawa
patent: 4979004 (1990-12-01), Esquivel et al.
patent: 5017977 (1991-05-01), Richardson
patent: 5053842 (1991-10-01), Kojima
patent: 5078498 (1992-01-01), Kadakia et al.
patent: 5141886 (1992-08-01), Mori
patent: 5143860 (1992-09-01), Mitchell et al.
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5162247 (1992-11-01), Hazani
patent: 5258634 (1993-11-01), Yang
IBM Technical Disclosure Bulletin vol. 25 No. 4 Sep. 1982.

Affiliated with

Also associated with

Rating

Method of making a floating gate memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a floating gate memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a floating gate memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1373796